The melting point of tantalum is 2996℃, the density is 16 68g cm3, the thermal conductivity (25℃): 54 (WMK), tantalum has high conductivity, high thermal stability and blocking effect on foreign atoms, so it uses the low shot coating method on the integrated circuit The tantalum film is plated to prevent the diffusion of copper into the base silicon. Tantalum targets are mainly used in the semiconductor and optical fields. Our company’s tantalum target material is produced by a tantalum ingot prepared by EB electron bombardment through a combination of rolling and annealing processes. The target produced by the method has a good internal structure, uniform crystal structure, texture and energy distribution. At present, the products are exported to Japan, South Korea, Taiwan, the United States and other countries and regions.